Infineon BSZ900N20NS3GATMA1: High-Performance 200V OptiMOS™ Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. The Infineon BSZ900N20NS3GATMA1 stands out as a premier solution, embodying the advanced engineering of Infineon’s OptiMOS™ technology. This 200V N-channel power MOSFET is specifically designed to meet the rigorous demands of modern applications, including industrial motor drives, telecom power supplies, and high-frequency DC-DC converters.

A key highlight of the BSZ900N20NS3GATMA1 is its exceptionally low on-state resistance (RDS(on)), which minimizes conduction losses and significantly enhances overall system efficiency. This allows designers to achieve higher power density without compromising thermal performance. The device also features superior switching characteristics, reducing switching losses and enabling operation at higher frequencies. This is particularly beneficial in applications where size and efficiency are critical, such as server power supplies and renewable energy systems.

The MOSFET is housed in a SuperSO8 package, offering an optimal balance between compact size and excellent thermal dissipation. This package technology ensures reliable operation even under high-stress conditions, making it suitable for automotive and industrial environments where durability is essential. Additionally, the device boasts a robust gate-source voltage rating and avalanche ruggedness, providing enhanced protection against voltage spikes and transients.

With its combination of low RDS(on), fast switching speed, and thermal efficiency, the BSZ900N20NS3GATMA1 empowers engineers to push the boundaries of performance in next-generation power systems. Its compliance with automotive standards further underscores its versatility and reliability across various sectors.

ICGOOODFIND: The Infineon BSZ900N20NS3GATMA1 sets a high benchmark for 200V power MOSFETs, delivering top-tier efficiency, thermal management, and reliability for demanding applications in industrial, automotive, and telecom sectors.

Keywords:

Power MOSFET

Low RDS(on)

SuperSO8 Package

Switching Performance

Avalanche Ruggedness