Infineon IPB60R040C7ATMA1 CoolMOS™ Power Transistor: Technical Specifications and Application Overview

Release date:2025-10-21 Number of clicks:139

Infineon IPB60R040C7ATMA1 CoolMOS™ Power Transistor: Technical Specifications and Application Overview

The Infineon IPB60R040C7ATMA1 is a state-of-the-art power MOSFET belonging to the renowned CoolMOS™ C7 series, representing a significant leap forward in high-voltage superjunction (SJ) technology. Engineered for exceptional efficiency and robustness, this transistor is designed to meet the demanding requirements of modern switched-mode power supplies (SMPS) and other power conversion systems.

Technical Specifications

This component is characterized by several key parameters that define its performance envelope:

Voltage and Current Ratings: It boasts a drain-source voltage (VDS) of 650 V, making it suitable for universal mains applications (85 V AC to 305 V AC). It features a continuous drain current (ID) of 32 A at a case temperature (TC) of 25°C, providing substantial current handling capability.

Ultra-Low On-Resistance: A standout feature is its exceptionally low typical on-resistance (RDS(on)) of 40 mΩ at a gate-source voltage (VGS) of 10 V. This minimal resistance directly translates to reduced conduction losses, which is paramount for achieving high energy efficiency.

Superior Switching Performance: Built on Infineon's advanced CoolMOS™ C7 technology, the transistor offers excellent switching characteristics with very low gate charge (QG) and low effective output capacitance (COEr). This enables faster switching frequencies, reduces switching losses, and minimizes electromagnetic interference (EMI), allowing for the design of smaller, more compact magnetics and passive components.

Enhanced Body Diode: The device incorporates a fast and rugged body diode with good reverse recovery behavior. This enhances its reliability in hard-switching and resonant topologies like power factor correction (PFC) and LLC converters, where the body diode is frequently utilized.

Package: It is housed in a TO-263-3 (D2PAK) surface-mount package (ATMA1), which offers a good balance between power dissipation capability, mechanical robustness, and board space.

Application Overview

The IPB60R040C7ATMA1 is ideally suited for a wide range of high-efficiency power conversion applications. Its primary use cases include:

Switched-Mode Power Supplies (SMPS): It is a perfect fit for high-efficiency server, telecom, and industrial SMPS where minimizing energy loss is critical.

Power Factor Correction (PFC): Its fast switching and robust diode make it an excellent choice for both interleaved and single-phase boost PFC stages, helping systems meet stringent efficiency regulations like 80 PLUS.

Solar Inverters and UPS Systems: The high voltage rating and efficiency are crucial for the DC-AC conversion stages in solar microinverters and uninterruptible power supplies.

Lighting: It is used in high-performance LED lighting drivers and electronic ballasts for industrial lighting systems.

Motor Control and Drives: Suitable for inverters driving motors in appliances and industrial automation.

ICGOOODFIND Summary

The Infineon IPB60R040C7ATMA1 CoolMOS™ C7 transistor sets a high benchmark for high-voltage power switches. Its defining combination of ultra-low 40 mΩ on-resistance, fast switching speed, and a robust package makes it an optimal solution for designers aiming to maximize power density and efficiency in their next-generation power supplies and conversion systems, pushing the boundaries of performance while reducing thermal management challenges.

Keywords:

1. CoolMOS™ C7

2. 650 V

3. 40 mΩ

4. High-Efficiency

5. SMPS

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