Infineon IPD60R145CFD7 CoolMOS™ CFD7 Power Transistor: Advanced 600V Superjunction MOSFET for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics demands continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's CoolMOS™ CFD7 series, with the IPD60R145CFD7 standing out as a premier 600V superjunction (SJ) MOSFET engineered to set new benchmarks in performance. This device is specifically designed to address the rigorous requirements of contemporary switched-mode power supplies (SMPS), server and telecom power systems, industrial drives, and renewable energy applications.

A defining characteristic of the IPD60R145CFD7 is its exceptionally low figure-of-merit (R DS(on) x Q G). With an on-state resistance (R DS(on)) of just 145mΩ and optimized gate charge (Q G), it achieves an outstanding balance between conduction and switching losses. This synergy is crucial for operating at high switching frequencies, which allows for the design of smaller, lighter magnetics and filter components, thereby significantly increasing overall power density. The superjunction technology is the cornerstone of this achievement, enabling lower conduction losses compared to standard planar MOSFETs.

Beyond raw performance, the CFD7 family incorporates features that enhance robustness and reliability. The integrated fast body diode provides superior reverse recovery characteristics (Q rr and I RM), which is vital for hard-switching topologies like power factor correction (PFC) circuits. This feature minimizes switching losses during diode commutation and reduces electromagnetic interference (EMI), leading to more stable and reliable system operation. Furthermore, the high dv/dt ruggedness and excellent tolerance to parasitic turn-on ensure stable operation under demanding conditions, a critical factor for industrial environments.

The device also excels in ease of use. Its low gate charge simplifies drive circuit design, reducing the burden on the gate driver IC and contributing to higher efficiency. The PQFN 8x8 package offers superior thermal performance with a very low thermal resistance from junction to case (R thJC), enabling efficient heat dissipation and allowing for higher power throughput or more compact form factors.

ICGOOODFIND: The Infineon IPD60R145CFD7 CoolMOS™ CFD7 is a superior 600V power MOSFET that masterfully combines minimized switching and conduction losses, integrated fast body diode ruggedness, and excellent thermal performance. It is an optimal choice for designers aiming to push the boundaries of efficiency and power density in high-performance applications.

Keywords: CoolMOS™ CFD7, Superjunction MOSFET, High-Efficiency, Low RDS(on), Fast Body Diode.